Mitsubishi PM100RSE120 IPM Module 

FEATURE

a) Adopting new 4th generation planar IGBT chip, which performance is improved by 1µm fine rule process.

b) Using new Diode which is designed to get soft reverse recovery characteristics.

3? 100A, 1200V Current-sense IGBT for 15kHz switching 

50A, 1200V Current-sense regenerative brake IGBT • Monolithic gate drive & protection logic •

Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage 

Acoustic noise-less 18.5/22kW class inverter application •

UL Recognized

New One Year Warranty