SIHG22N60S-E3 VISHAY N-Ch MOSFET 600V 22A 190mOhm 250W TO-247AC
2X SIHG22N60S-E3 VISHAY N-Ch MOSFET 600V 22A 190mOhm 250W TO-247AC
Specification | |
---|---|
Mounting Style | Through Hole |
Packaging | TO-247AC-3 |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 22 A |
Rds On - Drain-Source Resistance | 190 mOhms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 75 nC |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 250 W |
Channel Mode | Enhancement |
Series | S |
Packaging | Tube |
Brand | Vishay / Siliconix |
Configuration | Single |
Fall Time | 59 ns |
Rise Time | 68 ns |
Typical Turn-Off Delay Time | 77 ns |
Typical Turn-On Delay Time | 24 ns |
Shipping Policy
Our go-to options for small to medium items are USPS Ground Advantage and USPS Priority Mail, known for their reliable tracking and peace of mind.
Smaller items might qualify for USPS First Class Mail. Contact us to discuss this option before purchasing.
Note: This method is less recommended due to the potential for delays.
Return Policy
We offer a 30-day return policy, no questions asked. If you choose to provide a reason for the return, it will assist us in improving and fix the issue.
Packaging
Our items are packaged according to their needs—some in ESD bags with pins secured in protective sponge, others in foam-enclosed boxes. For larger quantities, options include broken tubes for transistors or cartons. We welcome your suggestions for packaging preferences.