FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

60V

Current - Continuous Drain (Id) @ 25°C

1.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4V, 5V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.4nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 25V

Vgs (Max)

±10V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Rds On (Max) @ Id, Vgs

200 mOhm @ 1A, 5V

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

4-DIP, Hexdip, HVMDIP

Package / Case

4-DIP (0.300", 7.62mm)